BFG25A/X,215 NXP Semiconductors, BFG25A/X,215 Datasheet - Page 4

• Manufacturer Part Number: BFG25A/X,215
• Description: TRANS NPN 5V 5GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG25A/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 0.5 mA @ 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934008590215; BFG25A/X T/R; BFG25A/X T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
(mW)
C re
(pF)
I
P tot
C
= i
Fig.4
0.3
0.2
0.1
c
40
30
20
10
0
0
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.2 Power derating curve.
50
2
100
4
150
V
CB
T s ( o C)
MRC038 - 1
MCD139
(V)
200
Rev. 04 - 27 November 2007
6
handbook, halfpage
handbook, halfpage
(GHz)
V
V
h FE
CE
CE
f
Fig.3
T
100
= 1 V.
= 1 V; f = 500 MHz; T
Fig.5
80
60
40
20
6
4
2
0
0
10
0
3
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
10
1
2
amb
= 25 C.
10
2
1
Product specification
3
1
BFG25A/X
I
I
C
C
MCD140
(mA)
(mA)
MCD138
4 of 12
10
4