BFG540W,115 NXP Semiconductors, BFG540W,115 Datasheet - Page 6

• Manufacturer Part Number: BFG540W,115
• Description: TRANS NPN 8V 120MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG540W,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 100 @ 40mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934032310115; BFG540W T/R; BFG540W T/R

NXP Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
Fig.7
I
Fig.9
f = 900 MHz; V
C
gain
(dB)
gain
(dB)
= 10 mA; V
50
30
20
10
40
30
20
10
0
0
10
0
Gain as a function of collector current;
Gain as a function of frequency; typical
typical values.
values.
MSG
G UM
MSG
CE
CE
= 8 V.
= 8 V.
10
10
2
20
30
10
3
f (MHz)
40
I
G max
G UM
C
G max
MLC045
MLC047
(mA)
10
50
4
6
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
Fig.8
I
Fig.10 Gain as a function of frequency; typical
C
gain
(dB)
gain
(dB)
= 40 mA; V
30
20
10
50
40
30
20
10
0
0
10
0
Gain as a function of collector current;
typical values.
values.
BFG540W/X; BFG540W/XR
CE
G UM
MSG
CE
= 8 V.
= 8 V.
10
10
2
20
30
10
3
Product specification
BFG540W
f (MHz)
40
I
G max
G UM
C
G max
MLC048
MLC046
(mA)
10
50
4