NESG2030M04-T2-A CEL, NESG2030M04-T2-A Datasheet - Page 2

• Manufacturer Part Number: NESG2030M04-T2-A
• Description: TRANS NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NESG2030M04-T2-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.3V
• Frequency - Transition: 60GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.1dB @ 2GHz
• Gain: 16dB
• Power - Max: 80mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Power Dissipation: 80 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
TYPICAL PERFORMANCE CURVES
Note:
1. Operation in excess of any one of these parameters may result
2. Mounted on 1.08 cm
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
T
EBO
I
STG
C
T 2
J
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
f = 2 GHz
CE
Collector to Emitter Voltage, V
= 2 V
PARAMETERS
COLLECTOR CURRENT vs.
COLLECTOR CURRENT
Collector Current, I
GAIN BANDWIDTH vs.
2
• 1.0 mm (t) glass epoxy substrate
1
10
2
C
(mA)
UNITS
190 μa
I
B
mW
130 μa
160 μa
70 μa
mA
40 μa
°C
°C
100 μa
= 10 μa
CE
V
V
V
1
(V)
(T
A
100
(T
= 25°C)
3
-65 to +150
RATINGS
A
= 25°C)
150
8.0
2.3
1.2
35
80
ORDERING INFORMATION
ORDERING INFORMATION (Pb-Free)
THERMAL RESISTANCE
SYMBOLS
PART NUMBER
NESG2030M04-A
NESG2030M04-T2-A
R
PART NUMBER
NESG2030M04
NESG2030M04-T2
th j-c
1000
100
30
25
20
15
10
10
5
0
Junction to Case Resistance
0.1
0.1
PARAMETERS
INSERTION POWER GAIN
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
Frequency, f (GHz)
vs. FREQUENCY
1
50 pcs(non reel)
3 kpcs/reel
50 pcs(non reel)
3 kpcs/reel
1
(Solder Contains Lead)
QUANTITY
QUANTITY
10
C
(mA)
NESG2030M04
UNITS
°C/W
V
I
C
V
CE
= 20 mA
CE
= 2 V
= 2 V
100
10
RATINGS
150