NESG2030M04-T2-A CEL, NESG2030M04-T2-A Datasheet - Page 3

• Manufacturer Part Number: NESG2030M04-T2-A
• Description: TRANS NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NESG2030M04-T2-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.3V
• Frequency - Transition: 60GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.1dB @ 2GHz
• Gain: 16dB
• Power - Max: 80mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Power Dissipation: 80 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
30
25
20
15
10
70
60
50
40
30
20
10
5
0
30
25
20
15
10
0
5
0
1
-5
V
f = 1 GHz
1
THIRD ORDER INTERMODULATION
CE
V
f = 5 GHz
CE
Output Power (each tone), P
= 2 V
MAXIMUM AVAILABLE GAIN,
= 2 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
Collector Current, I
Collector Current, I
0
vs. OUTPUT POWER
DISTORTION
5
10
10
|S
MSG
|S
21e
MAG
21e
10
|
2
|
2
C
C
V
I
f = 2 GHz
offset = 1 MHz
cq
CE
(mA)
(mA)
= 5 mA
= 2 V
out
15
(mA)
100
100
(T
20
A
= 25°C)
-10
-15
25
20
15
10
30
25
20
15
10
-5
5
4
3
2
1
0
5
0
5
0
-20
1
1
V
I
V
f = 1.5 GHz
cq
V
f = 2 GHz
CE
CE
NOISE FIGURE AND ASSOCIATED
CE
GAIN vs. COLLECTOR CURRENT
= 5 mA(RF OFF)
= 2 V, f = GHz
= 2 V
vs. COLLECTOR CURRENT
= 2 V
OUTPUT POWER, COLLECTOR
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
CURRENT vs. INPUT POWER
Collector Current, I
-15
Collector Current, I
Input Power, P
-10
I
C
10
10
P
out
|S
MSG
G
NF
21e
a
-5
|
in
C
2
C
(V)
(mA)
NESG2030M04
(mA)
0
100
100
5
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0