NE662M04-T2-A CEL, NE662M04-T2-A Datasheet - Page 3
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NE662M04-T2-A
Manufacturer Part Number
NE662M04-T2-A
Description
TRANSISTOR NPN 2GHZ M04
Manufacturer
CEL
Datasheet
1.NE662M04-A.pdf
(11 pages)
Specifications of NE662M04-T2-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.3V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.5dB @ 2GHz
Gain
20dB
Power - Max
115mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
M04
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.035 A
Power Dissipation
115 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
1.00
0.00
6.00
2.00
1.00
0.00
6.00
5.00
4.00
3.00
2.00
5.00
4.00
3.00
4.5
4.0
2.5
2.0
1.5
1.0
0.5
3.5
3.0
2
1
1
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
GAIN vs. COLLECTOR CURRENT
G
Collector Current, I
A
Collector Current, I
GAIN vs. FREQUENCY
3
Frequency, f (GHz)
NF
4
10
10
NF
G
NF
A
G
5
f = 2.0 GHz, V
f = 2.5 GHz, V
A
V
CE
C
C
6
= 2V, l
(mA)
(mA)
7
C
CE
CE
= 5 mA
8 9 10 12
= 2 V
= 2 V
(T
100
100
A
18
16
14
12
10
= 25˚C)
6
4
2
5.0
0.0
30.0
20.0
15.0
10.0
5.0
0.0
8
30.0
20.0
15.0
10.0
25.0
25.0
1.00
0.00
6.00
4.00
3.00
2.00
1.00
0.00
6.00
5.00
4.00
3.00
2.00
5.00
4.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2
1
1
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
GAIN vs. COLLECTOR CURRENT
NF
Collector Current, I
Collector Current, l
GAIN vs. FREQUENCY
3
Frequency, f (GHz)
G
A
4
10
10
NF
G
NF
G
A
5
A
f = 1.5 GHz, V
f = 1.0 GHz, V
V
C
C
C
6
= 2V, l
(mA)
(mA)
7
C
= 10 mA
CE
CE
8 9 10 12
= 2 V
= 2 V
NE662M04
100
100
18
14
12
16
10
5.0
0.0
30.0
10.0
5.0
0.0
30.0
20.0
15.0
10.0
25.0
20.0
15.0
25.0
6
8
4