NE662M04-T2-A CEL, NE662M04-T2-A Datasheet - Page 3

• Manufacturer Part Number: NE662M04-T2-A
• Description: TRANSISTOR NPN 2GHZ M04
• Manufacturer: CEL

Specifications of NE662M04-T2-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 1.5dB @ 2GHz
• Gain: 20dB
• Power - Max: 115mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.035 A
• Power Dissipation: 115 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
1.00
0.00
6.00
2.00
1.00
0.00
6.00
5.00
4.00
3.00
2.00
5.00
4.00
3.00
4.5
4.0
2.5
2.0
1.5
1.0
0.5
3.5
3.0
2
1
1
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
GAIN vs. COLLECTOR CURRENT
G
Collector Current, I
A
Collector Current, I
GAIN vs. FREQUENCY
3
Frequency, f (GHz)
NF
4
10
10
NF
G
NF
A
G
5
f = 2.0 GHz, V
f = 2.5 GHz, V
A
V
CE
C
C
6
= 2V, l
(mA)
(mA)
7
C
CE
CE
= 5 mA
8 9 10 12
= 2 V
= 2 V
(T
100
100
A
18
16
14
12
10
= 25˚C)
6
4
2
5.0
0.0
30.0
20.0
15.0
10.0
5.0
0.0
8
30.0
20.0
15.0
10.0
25.0
25.0
1.00
0.00
6.00
4.00
3.00
2.00
1.00
0.00
6.00
5.00
4.00
3.00
2.00
5.00
4.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2
1
1
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
GAIN vs. COLLECTOR CURRENT
NF
Collector Current, I
Collector Current, l
GAIN vs. FREQUENCY
3
Frequency, f (GHz)
G
A
4
10
10
NF
G
NF
G
A
5
A
f = 1.5 GHz, V
f = 1.0 GHz, V
V
C
C
C
6
= 2V, l
(mA)
(mA)
7
C
= 10 mA
CE
CE
8 9 10 12
= 2 V
= 2 V
NE662M04
100
100
18
14
12
16
10
5.0
0.0
30.0
10.0
5.0
0.0
30.0
20.0
15.0
10.0
25.0
20.0
15.0
25.0
6
8
4