NE662M04-T2-A CEL, NE662M04-T2-A Datasheet - Page 4
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NE662M04-T2-A
Manufacturer Part Number
NE662M04-T2-A
Description
TRANSISTOR NPN 2GHZ M04
Manufacturer
CEL
Datasheet
1.NE662M04-A.pdf
(11 pages)
Specifications of NE662M04-T2-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.3V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.5dB @ 2GHz
Gain
20dB
Power - Max
115mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
M04
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.035 A
Power Dissipation
115 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
250
200
150
100
25
20
15
10
50
50
40
30
20
10
5
0
0
0
1
1
TOTAL POWER DISSIPATION vs.
Mounted on a Ceramic Substrate
Free Air
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
Ambient Temperature, T
200
COLLECTOR CURRENT vs.
25
V
5
AMBIENT TEMPERATURE
CE
COLLECTOR CURRENT
Collector Current, I
GAIN BANDWIDTH vs.
= 2 V
V
CE
400
10
50
= 2 V
600
20
75
V
CE
100
800
25
C
Infinite Heatsink
= 1 V
(mA)
A
BE
(°C)
1000
125
30
(V)
1200
(T
150
35
A
= 25˚C)
0.50
0.40
0.30
0.20
0.10
120
110
100
90
80
70
60
50
40
30
20
30
20
10
0
0
.1
0
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
Collector to Emitter Voltage, V
FEEDBACK CAPACITANCE vs.
V
1
COLLECTOR CURRENT vs.
CE
1.0
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
= 2 V
1.0
2
2.0
3
2.0
3.0
5
C
7
(mA)
Freq. = 1 MHz
10
4.0
IB = 5 µA
CE
CE
255 µA
355 µA
305 µA
205 µA
155 µA
105 µA
3.0
55 µA
(V)
(V)
NE662M04
20 30
3.5
5.0