NE68130-T1-A CEL, NE68130-T1-A Datasheet - Page 16
![TRANSISTOR NPN 1GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE68130-T1-A
Manufacturer Part Number
NE68130-T1-A
Description
TRANSISTOR NPN 1GHZ SOT-323
Manufacturer
CEL
Specifications of NE68130-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
Gain
9dB ~ 13.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SC4227-T1-A
NE68130-ATR
NE68130-ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE68130-T1-A
Manufacturer:
CEL
Quantity:
6 000
Part Number:
NE68130-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
NE68135 NONLINEAR MODEL
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAR
CJE
MJE
CJC
VJC
VAF
VJE
ISE
IKR
ISC
IRB
IKF
NR
NF
NE
BR
RE
RB
BF
NC
RC
IS
1.77e-11
1.2e-12
0.8e-12
2.7e-16
Infinity
Infinity
1.2e-5
185.0
0.055
BASE
1.02
15.0
0.77
0.27
Q1
2.1
0.6
3.7
0.5
12
0
1
1
8
2
Parameters
CBEX_PKG
RB_PKG
0.1 ohms
XCJC
0.1pF
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
LB_PKG
0.15nH
14e-12
0.3e-9
0.05pF
CBE_PKG
0.56
0.75
1.11
Q1
0.5
0.1
25
0
0
0
3
0
0
3
0
1
0.45nH
(1)
LB
0.07pF
CCB
CCB_PKG
0.11pF
RE_PKG
0.1 ohms
LE_PKG
0.38nH
EMITTER
CCE
0.01pF
0.96 nH
LC
0.15nH
Q1
LC_PKG
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
CCE_PKG
0.2pF
CCEX_PKG
Parameter
time
capacitance
inductance
resistance
voltage
current
0.2pF
0.1 ohms
RC_PKG
0.05 to 5.0 GHz
V
11/1/96
CE
= 8.0 V, I
COLLECTOR
NE681 SERIES
C
= 7 mA to 30 mA
seconds
farads
henries
ohms
volts
amps
Units