NE68130-T1-A CEL, NE68130-T1-A Datasheet - Page 5
![TRANSISTOR NPN 1GHZ SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
NE68130-T1-A
Manufacturer Part Number
NE68130-T1-A
Description
TRANSISTOR NPN 1GHZ SOT-323
Manufacturer
CEL
Specifications of NE68130-T1-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
Gain
9dB ~ 13.5dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 7mA, 3V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
SOT-323
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.065 A
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SC4227-T1-A
NE68130-ATR
NE68130-ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE68130-T1-A
Manufacturer:
CEL
Quantity:
6 000
Part Number:
NE68130-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
100
100
500
300
200
400
300
200
3.0
2.5
2.0
1.5
1.0
0.5
70
50
30
20
10
0
0
1
1
0
DC POWER DERATING CURVES
NE68133
Ambient Temperature, T
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
2
2
50
3
3
NOISE FIGURE
NE68133
5
5
100
7
7
10
10
C
C
(mA)
(mA)
NE68135
150
A
V
20
V
f = 1 GHz
20
(°C)
CE
CE
(T
= 8 V
= 8 V
A
30
30
= 25°C)
200
50
50
2.5
2.0
1.5
1.0
0.5
20
3.0
3.0
50
30
10
5.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7
3
2
5
1
0
1
COLLECTOR TO BASE CAPACITANCE
1
1
vs. COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
2
2
2
NE68100 & NE68135
3
3
3
NOISE FIGURE
5
5
5
7
7
7 10
10
10
V
f = 2 GHz
CE
C
C
= 8 V
(mA)
(mA)
NE68133
NE68135
NE681 SERIES
20
20
V
20
CB
CE
= 8 V
(V)
30
30
30
50
50
50