BFG198,115 NXP Semiconductors, BFG198,115 Datasheet - Page 10

• Manufacturer Part Number: BFG198,115
• Description: TRANS NPN 10V 8GHZ SOT223
• Manufacturer: NXP Semiconductors

Specifications of BFG198,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 50mA, 5V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 40 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933919930115; BFG198 T/R; BFG198 T/R

NXP Semiconductors
1995 Sep 12
handbook, full pagewidth
NPN 8 GHz wideband transistor
I
I
C
C
= 50 mA; V
= 50 mA; V
CE
CE
= 8 V; T
= 8 V; T
amb
amb
= 25 C.
= 25 C; Z
+ j
– j
Fig.15 Common emitter reverse transmission coefficient (S
180
0
Fig.16 Common emitter output reflection coefficient (S
10
10
o
150 o
o
0.2
150 o
= 50 .
0.16
10
25
25
0.12
120 o
120 o
0.08
25
2 GHz
0.04
40 MHz
50
50
50
90 o
10
90 o
100
2 GHz
40 MHz
60 o
60 o
250
100
100
MBB493
MBB495
250
250
30 o
30 o
∞
22
0 o
).
12
).
ϕ
ϕ
Product specification
BFG198