NE68019-A CEL, NE68019-A Datasheet - Page 12

• Manufacturer Part Number: NE68019-A
• Description: TRANSISTOR NPN 2GHZ 3-SMD
• Manufacturer: CEL

Specifications of NE68019-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
• Gain: 9.6dB ~ 13.5dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 3 GHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
NE68018 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
ISE
IKR
ISC
IRB
IKF
NF
NE
BR
NR
RE
RB
BF
NC
RC
IS
0.358e-12
0.162e-12
3.84e-16
1.0e-14
4.01e-4
Infinity
Infinity
124.9
0.027
10.46
1.05
2.17
1.05
17.9
1.02
0.71
0.79
11.9
Q1
0.6
0.5
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
FC
TR
EG
TF
KF
AF
Base
C
BEPKG
L
0.635e-9
BX
8.7e-12
0.082
0.64
0.75
19.1
1.11
Q1
0.5
18
0
0
0
0
3
0
1
0
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
C
CE
L
C
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
L
C
C
C
L
L
L
B
C
E
BX
CX
EX
Q1
CB
CE
CBPKG
CEPKG
BEPK
L
C
CX
CEPKG
0.05 to 5.0 GHz
V
5/31/96
CE
= 1 V to 6 V, I
Collector
C
0.08e-12
0.08e-12
1.38e-9
2.55e-9
0.85e-9
0.14e-12
0.58e-12
0.29e-12
0.18e-9
0.47e-9
0.09e-9
seconds
farads
henries
ohms
volts
amps
= 1 mA to 15 mA
68018
Units