NE68019-A CEL, NE68019-A Datasheet - Page 14

• Manufacturer Part Number: NE68019-A
• Description: TRANSISTOR NPN 2GHZ 3-SMD
• Manufacturer: CEL

Specifications of NE68019-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 10GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
• Gain: 9.6dB ~ 13.5dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 3 GHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
SCHEMATIC
NE68030 NONLINEAR MODEL
Parameters
RBM
VAR
MJE
CJC
VAF
CJE
VJE
VJC
IKR
ISC
IRB
IKF
ISE
NF
NE
BR
NR
RE
RB
BF
NC
RC
IS
0.358e-12
0.162e-12
3.84e-16
1.0e-14
4.01e-4
Infinity
Infinity
124.9
0.027
1.05
2.17
1.05
17.9
1.02
10.5
0.71
0.79
11.9
0.6
0.5
Q1
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
EG
FC
TF
TR
KF
AF
Base
C
BEPKG
L
0.635e-9
BX
8.7e-12
0.082
0.64
0.75
19.1
1.11
Q1
0.5
18
0
0
0
0
0
3
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
C
Q1
CEPKG
L
CX
0.05 to 3.0 GHz
V
10/25/96
CE
= 2.5 V to 6 V, I
Collector
0.08e-12
0.08e-12
0.7e-9
1e-9
0.12e-12
0.16e-12
0.04e-12
0.2e-9
0.2e-9
0.2e-9
seconds
farads
henries
ohms
volts
amps
Units
C
68030
= 1 mA to 15 mA