BLT70,115 NXP Semiconductors, BLT70,115 Datasheet - Page 3

• Manufacturer Part Number: BLT70,115
• Description: TRANS NPN 8V 250MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT70,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 8V
• Frequency - Transition: 900MHz
• Power - Max: 2.1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 100mA, 4.8V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Maximum Dc Collector Current: 0.25 A
• Power Dissipation: 2100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032210115; BLT70 T/R; BLT70 T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. T
1996 Feb 06
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
UHF power transistor
s
P tot
(W)
is the temperature at the soldering point of the collector pin.
3
2
1
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to
soldering point
Fig.2 DC SOAR.
PARAMETER
PARAMETER
100
T s (
o
C)
MGD197
200
open emitter
open base
open collector
T
P
s
tot
= 60 C; note 1
= 2.1 W; T
3
CONDITIONS
CONDITIONS
s
= 60 C; note 1
65
MIN.
VALUE
55
Product specification
16
8
2.5
250
2.1
+150
175
MAX.
BLT70
UNIT
K/W
V
V
V
mA
W
C
C
UNIT