NE663M04-A CEL, NE663M04-A Datasheet - Page 3

• Manufacturer Part Number: NE663M04-A
• Description: TRANSISTOR NPN 2GHZ M04
• Manufacturer: CEL

Specifications of NE663M04-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.7dB @ 2GHz
• Gain: 15dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 190 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
1.00
0.80
0.60
0.40
0.20
0.00
400
350
330
300
250
200
190
150
100
100
50
60
80
40
20
0
0
0.0
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
Mounted on
ceramic substrate
(15 × 15 mm, t = 0.6 mm)
Collector to Emitter Voltage, V
Collector to Emitter Voltage, V
DC POWER DERATING CURVES
FEEDBACK CAPACITANCE vs.
Ambient Temperature, T
Free Air
COLLECTOR CURRENT vs.
25
1.0
1.0
50
2.0
75
When case temperature
is specified
2.0
3.0
100
freq. = 1 MHz
A
(°C)
4.0
125
CE
CE
1050 µA
900 µA
750 µA
600 µA
450 µA
300 µA
150 µA
3.0
(V)
5 µA
(V)
3.5
150
5.0
(T
A
= 25°C)
50.000
40.000
30.000
20.000
10.000
0.000
30
25
20
15
10
200
150
100
5
0
50
0
0.01
1
V
CE
GAIN BANDWIDTH PRODUCT vs.
V
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
CE
= 3.0 V
COLLECTOR CURRENT vs.
200.0
DC FORWARD CURRENT vs.
= 2V
COLLECTOR CURRENT
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
0.1
400.0
10
600.0
1
100
800.0
C
C
(mA)
(mA)
BE
10
V
1.000
CE
(V)
= 2.0 V
NE663M04
1000
1.200
100