NE663M04-A CEL, NE663M04-A Datasheet - Page 5

• Manufacturer Part Number: NE663M04-A
• Description: TRANSISTOR NPN 2GHZ M04
• Manufacturer: CEL

Specifications of NE663M04-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.3V
• Frequency - Transition: 15GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 1.7dB @ 2GHz
• Gain: 15dB
• Power - Max: 190mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: M04
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Power Dissipation: 190 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
6.0
5.0
4.0
3.0
2.0
1.0
0.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1
1
NOISE FIGURE AND ASSOCIATED
V
f = 1 GHz
V
f = 2 GHz
GAIN vs. COLLECTOR CURRENT
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
CE
CE
= 2 V
= 2 V
Collector Current, l
Collector Current, l
10
10
NF
G
NF
G
a
a
C
C
(mA)
(mA)
100
100
30
25
20
15
10
5
0
30
25
20
15
10
5
0
(T
A
= 25°C)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1
1
V
f = 1.5 GHz
NOISE FIGURE AND ASSOCIATED
NOISE FIGURE AND ASSOCIATED
V
f = 2.5 GHz
GAIN vs. COLLECTOR CURRENT
CE
GAIN vs. COLLECTOR CURRENT
CE
= 2 V
= 2 V
Collector Current, l
Collector Current, l
10
10
NF
NF
G
G
a
a
C
C
(mA)
(mA)
100
100
30
25
20
15
10
5
0
30
25
20
15
10
5
0