NESG2031M05-A CEL, NESG2031M05-A Datasheet - Page 3

• Manufacturer Part Number: NESG2031M05-A
• Description: TRANS NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NESG2031M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 17dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
0.0001
0.001
1 000
1 000
0.01
100
100
100
0.1
10
10
10
1
0.4
0.1
0.1
V
CE
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
0.5
COLLECTOR CURRENT vs.
= 3 V
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current, l
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
0.6
1
1
0.7
0.8
10
10
C
C
(mA)
(mA)
BE
V
V
0.9
CE
CE
(V)
(T
= 1 V
= 3 V
A
= 25ºC)
100
100
1.0
1 000
100
10
35
30
25
20
15
10
35
30
25
20
15
10
5
0
5
0
0.1
1
V
f = 2 GHz
COLLECTOR TO EMITTER VOLTAGE
CE
Collector to Emitter Voltage, V
= 1 V
GAIN BANDWIDTH PRODUCT
1
COLLECTOR CURRENT vs.
vs. COLLECTOR CURRENT
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
Collector Current, l
1
2
10
3
10
4
C
C
(mA)
(mA)
NESG2031M05
V
I
B
CE
CE
5
= 20 A
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
= 2 V
(V)
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
100
100
6