NESG2031M05-A CEL, NESG2031M05-A Datasheet - Page 7

• Manufacturer Part Number: NESG2031M05-A
• Description: TRANS NPN 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NESG2031M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 17dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
20
15
10
20
15
10
-5
-5
5
0
6
5
4
3
2
1
0
5
0
-25
-15
1
OUTPUT POWER, COLLECTOR CUR-
OUTPUT POWER, COLLECTOR CUR-
NOISE FIGURE, ASSOCIATED GAIN
V
I
V
I
cq
cq
CE
CE
= 20 mA (RF OFF)
= 20 mA (RF OFF)
vs. COLLECTOR CURRENT
= 3 V, f = 5.2 GHz
= 3 V, f = 2 GHz
-20
-10
RENT vs. INPUT POWER
RENT vs. INPUT POWER
Collector Current, I
Input Power, P
Input Power, P
-15
-5
P
10
out
P
out
G
NF
-10
in
in
a
0
(dBm)
(dBm)
C
I
I
(mA)
C
C
(T
V
f = 1 GHz
-5
5
CE
A
= 25ºC)
= 2 V
100
10
0
50
40
30
20
10
0
50
40
30
20
10
0
30
25
20
15
10
5
0
20
15
10
-5
6
5
4
3
2
1
0
5
0
6
5
4
3
2
1
0
-20
1
1
NOISE FIGURE, ASSOCIATED GAIN
OUTPUT POWER, COLLECTOR CUR-
V
I
NOISE FIGURE, ASSOCIATED GAIN
cq
CE
= 20 mA (RF OFF)
vs. COLLECTOR CURRENT
= 3 V, f = 3 GHz
-15
vs. COLLECTOR CURRENT
RENT vs. INPUT POWER
Collector Current, I
Collector Current, I
Input Power, P
-10
P
10
10
out
G
NF
NF
G
a
a
-5
in
(dBm)
I
C
C
C
NESG2031M05
(mA)
(mA)
V
f = 1 GHz
V
f = 2 GHz
CE
0
CE
= 1 V
= 1 V
100
100
5
30
25
20
15
10
5
0
30
25
20
15
10
5
0
50
40
30
20
10
0