NE856M02-AZ CEL, NE856M02-AZ Datasheet - Page 3

• Manufacturer Part Number: NE856M02-AZ
• Description: TRANSISTOR NPN 1GHZ SOT-89
• Manufacturer: CEL

Specifications of NE856M02-AZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6.5GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 3dB @ 1GHz
• Power - Max: 1.2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Dc Collector/base Gain Hfe Min: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
0.5
0.3
10
5
3
2
1
7
6
5
4
3
2
1
0
0.5
GAIN BAND WIDTH PRODUCT vs.
V
f = 1 GHz
1
CE
= 10 V
Collector Current, Ic (mA)
COLLECTOR CURRENT
1
COLLECTOR CURRENT
Collector Current, Ic (mA)
NOISE FIGURE vs.
3
5
5
10
10
20
V
f = 1 GHz
CE
30
= 10 V
50
50
(T
A
= 25°C)
-80
-70
-60
-50
-40
-30
20
10
0
INTERMODULATION DISTORTION vs.
INSERTION GAIN AND MAXIMUM
20
V
Ic = 20 mA
Collector Current, I
CE
GAIN vs. FREQUENCY
COLLECTOR CURRENT
= 10 V
0.2
30
Frequency, f (GHz)
40
at
0.4
{
IM
IM
V
V
Rg = Re 50 Ω
CE
O
3
2
50
= 100 dBµ V/50 Ω
0.6 0.8 1.0 1.4
f = 90 + 100 MHz
f = 2 x 200 - 190 MHz
C
= 10 V
(mA)
60
IM3
IM2
|S
MAG
21E
70
|
2
2.0