NE856M02-AZ CEL, NE856M02-AZ Datasheet - Page 7

• Manufacturer Part Number: NE856M02-AZ
• Description: TRANSISTOR NPN 1GHZ SOT-89
• Manufacturer: CEL

Specifications of NE856M02-AZ

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6.5GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 3dB @ 1GHz
• Power - Max: 1.2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 10V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-89
• Dc Collector/base Gain Hfe Min: 250
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
Note:
1. Gain Calculation:
NE856M02
V
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
FREQUENCY
CE
MAG =
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
(GHz)
= 10 V, I
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
DATA SUBJECT TO CHANGE WITHOUT NOTICE
|S
|S
-j
j
0
10
10
21
12
|
|
C
(
K ±
-j
= 50 mA
j
25
25
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
0.388
0.380
0.377
0.378
0.379
0.380
0.381
0.382
0.381
0.382
0.383
0.383
0.385
0.386
0.389
0.392
MAG
K - 1
2
S
11
S
0.1 GHz
S
3 GHz
-113.0
-147.3
-172.1
).
175.4
166.1
158.2
151.2
144.7
138.5
132.5
126.8
121.0
104.8
11
115.6
110.2
22
-j
j
99.5
50
When K ≤ 1, MAG is undefined and MSG values are used. MSG =
50
ANG
S
3 GHz
11
S
0.1 GHz
35.396
20.013
10.398
22
MAG
-j
6.989
5.262
4.218
3.521
3.023
2.650
2.362
2.132
1.943
1.789
1.657
1.547
1.450
j
100
100
S
21
119.8
102.2
79.6
72.7
60.7
55.3
50.1
45.1
40.2
35.6
27.0
22.9
19.0
88.1
66.5
31.2
ANG
V
Coordinates in Ohms
CE
Frequency in GHz
= 10 V, I
MAG
0.015
0.057
0.173
0.188
0.023
0.040
0.075
0.092
0.109
0.125
0.141
0.157
0.203
0.218
0.232
0.246
S
C
12
= 50 mA
64.1
66.1
70.5
71.3
71.0
69.4
67.8
65.9
64.0
62.0
59.9
57.7
55.6
53.6
51.3
49.3
ANG
180˚
0.569
0.399
0.325
0.316
0.324
0.337
0.354
0.373
0.393
0.412
0.432
0.451
0.468
0.485
0.500
0.513
MAG
|S
|S
225˚
135˚
21
12
(T
|
|
S
S
0.1 GHz
A
, K = 1 + | ∆ | - |S
21
22
= 25°C)
-38.2
-40.5
-41.0
-44.8
-50.2
-55.9
-61.1
-66.2
-70.7
-74.9
-78.6
-82.1
-85.3
-88.3
-91.2
-94.0
ANG
S
3 GHz
21
2 |S
270˚
90˚
S
0.1 GHz
2
12
12
S
11
21
| - |S
0.60
0.85
1.00
1.05
1.06
1.07
1.06
1.06
1.05
1.04
1.03
1.01
1.00
0.98
0.97
0.96
2
|
Internet: http://WWW.CEL.COM
K
S
3 GHz
22
12
|
45˚
2
315˚
,
∆ = S
33.7
29.4
23.7
19.5
16.9
15.1
13.6
12.4
10.6
11.4
MAG
9.9
9.4
9.5
8.8
8.2
7.7
(dB)
0˚
11
11/14/2001
S
22
- S
21
S
12