BLT50,115 NXP Semiconductors, BLT50,115 Datasheet - Page 4

• Manufacturer Part Number: BLT50,115
• Description: TRANS NPN 7.5V SOT223
• Manufacturer: NXP Semiconductors

Specifications of BLT50,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 470MHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 300mA, 5V
• Current - Collector (ic) (max): 500mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 2000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934004150115; BLT50 T/R; BLT50 T/R

Philips Semiconductors
CHARACTERISTICS
T
April 1991
V
V
V
I
h
E
C
C
handbook, halfpage
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
SBR
= 25 C.
c
re
UHF power transistor
I
Fig.3
E
SYMBOL
= i
(pF)
C c
e
10
= 0; f = 1 MHz.
8
6
4
2
0
0
Collector capacitance as a function of
collector-base voltage, typical values.
2
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
second breakdown energy
collector capacitance
feedback capacitance
4
PARAMETER
6
8
V CB (V)
MEA218
10
4
open emitter;
I
open base;
I
open collector;
I
V
V
V
I
L = 25 mH;
R
f = 50 Hz
V
I
f = 1 MHz
V
I
f = 1 MHz
C
C
E
C
E
C
BE
CE
CE
CB
CE
BE
= 1 mA
= I
= 5 mA
= 10 mA
= 300 mA
= 0;
CONDITIONS
= 0;
= 10 V
= 5 V;
= 10
= 7.5 V;
= 7.5 V;
e
= 0;
20
10
3
25
0.55
MIN.
4.7
2.9
TYP.
Product specification
250
6
4.5
MAX.
BLT50
V
V
V
mJ
pF
pF
UNIT
A