NESG3031M14-A CEL, NESG3031M14-A Datasheet - Page 4
![TRANS NPN 5.8GHZ M14](/photos/29/5/290514/nesg_sml.jpg)
NESG3031M14-A
Manufacturer Part Number
NESG3031M14-A
Description
TRANS NPN 5.8GHZ M14
Manufacturer
CEL
Datasheet
1.NESG3031M14-T3-A.pdf
(10 pages)
Specifications of NESG3031M14-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.3V
Noise Figure (db Typ @ F)
0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
Gain
7.5dB ~ 16dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 6mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
M14
Continuous Collector Current
35 mA
Emitter- Base Voltage Vebo
1.5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Power Dissipation
175 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
4
Remark The graphs indicate nominal characteristics.
1 000
1 000
100
100
10
10
30
25
20
15
10
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 2 V
COLLECTOR CURRENT
COLLECTOR CURRENT
DC CURRENT GAIN vs.
DC CURRENT GAIN vs.
Collector Current I
Collector Current I
Collector Current I
1
1
10
C
C
C
10
10
(mA)
(mA)
(mA)
V
V
CE
CE
= 1 V
= 3 V
Data Sheet PU10415EJ04V0DS
100
100
100
1 000
100
25
10
30
25
20
15
10
30
20
15
10
5
0
5
0
0.1
1
1
V
f = 2 GHz
V
f = 2 GHz
CE
CE
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
= 1 V
= 3 V
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current I
Collector Current I
Collector Current I
1
10
10
NESG3031M14
C
C
C
10
(mA)
(mA)
(mA)
V
CE
= 2 V
100
100
100