NESG3031M14-A CEL, NESG3031M14-A Datasheet - Page 7

• Manufacturer Part Number: NESG3031M14-A
• Description: TRANS NPN 5.8GHZ M14
• Manufacturer: CEL

Specifications of NESG3031M14-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.3V
• Noise Figure (db Typ @ F): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
• Gain: 7.5dB ~ 16dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 6mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M14
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

20
15
10
–5
5
0
–20
5
4
3
2
1
0
1
Remark The graphs indicate nominal characteristics.
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
I
C (set)
CE
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
= 3 V, f = 2.4 GHz
= 20 mA
–15
Collector Current I
G
Input Power P
a
–10
NF
P
out
10
–5
in
(dBm)
C
(mA)
I
V
f = 2.4 GHz
C
CE
= 2 V
0
100
5
50
40
30
20
10
0
20
16
12
8
4
0
Data Sheet PU10415EJ04V0DS
20
15
10
–5
5
0
5
4
3
2
1
0
–15
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
V
I
C (set)
CE
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
= 3 V, f = 5.8 GHz
= 20 mA
–10
Collector Current I
Input Power P
–5
10
P
out
G
NF
a
0
in
(dBm)
C
(mA)
V
f = 5.8 GHz
NESG3031M14
CE
I
5
= 2 V
C
100
10
50
40
30
20
10
0
15
12
9
6
3
0
7