UPA895TD-A CEL, UPA895TD-A Datasheet - Page 2

• Manufacturer Part Number: UPA895TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA895TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 6.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note: 1. Operation in excess of any one of these parameters may
TYPICAL PERFORMANCE CURVES
SYMBOLS
V
V
V
T
P
T
CBO
CEO
EBO
STG
I
C
2. Mounted on 1.08cm
T
J
0.0001
result in permanent damage.
0.001
0.01
300
250
200
150
100
100
0.1
210
190
180
50
10
0
1
0.4
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CE
TOTAL POWER DISSIPATION vs.
Base to Emitter Voltage, V
= 1 V
PARAMETERS
BASE TO EMITTER VOLTAGE
Ambient Temperature, T
25
0.5
COLLECTOR CURRENT vs.
AMBIENT TEMPERATURE
1 Element
2 Elements
50
0.6
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm(t) glass epoxy substrate.
75
0.7
2
x 1.0 mm (t) )
2
100
0.8
UNITS
A
mW
mA
°C
°C
BE
V
V
V
(°C)
125
0.9
(V)
190 for 1 element
210 for 2 elements
1
-65 to +150
100
150
150
5.5
1.5
RATINGS
Q1
1.0
(T
9
A
(T
= 25°C)
A
100
150
5.5
Q2
1.5
= 25°C)
9
0.0001
0.001
0.01
100
1.0
0.8
0.6
0.4
0.2
0.1
10
6
5
4
3
2
1
0
0
1
REVERSE TRANSFR CAPACITANCE vs.
0.4
1
V
f = 2 GHz
NOISE FIGURE, ASSOCIATED GAIN
V
COLLECTOR TO BASE VOLTAGE
CE
CE
Collector to Base Voltage, V
Base to Emitter Voltage, V
= 2 V
= 2 V
BASE TO EMITTER VOLTAGE
vs. COLLECTOR CURRENT
0.5
COLLECTOR CURRENT vs.
Collector Current, I
2
0.6
4
0.7
10
G
NF
a
6
0.8
C
(mA)
f = 1 MHz
BE
CB
8
0.9
(V)
(V)
100
1.0
10
18
15
12
9
6
0
3