UPA895TD-A CEL, UPA895TD-A Datasheet - Page 9

• Manufacturer Part Number: UPA895TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA895TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 6.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 7mA, 3V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.1 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
UPA895TD NONLINEAR MODEL
* Set to default value.
(1) Gummel-Poon Model
Parameters
RBM
VAR
CJE
MJE
CJC
VAF
VJE
ISE
ISC
IRB
VJC
IKF
BR
NR
IKR
NC
RE
RB
RC
BF
NF
NE
IS
80.4e-15
0.65e-12
137e-18
532e-18
2.4e-12
0.9871
0.9889
0.021
20.4
28.7
1.28
0.45
0.87
0.34
0.52
166
Q1
2.4
2.7
1.7
50
4
1
0
80.4e-15
0.65e-12
137e-18
532e-18
2.4e-12
0.9871
0.9889
0.021
20.4
28.7
1.28
0.45
0.87
0.34
0.52
166
2.4
2.7
1.7
Q2
50
1
0
4
(1)
MODEL RANGE
Frequency:
Bias:
Date:
AF and KF are 1/f noise parameters and are bias dependent.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
For a better understanding on AF and KF parameters,
please refer to AN1026.
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
KF
AF
KF*
AF*
ITF
XTI
FC
EG
TF
TR
0.1 to 3.0 GHz
V
4/03
CE
4.547e-15
Ic = 5 mA
=0.5 V to 3 V, I
1.4
18e-12
1.0e-9
0.14
0.75
0.55
0.03
1.11
Q1
0.5
0.1
0
0
2
0
0
3
0
1
C
Ic = 10 mA
855e-12
= 1 mA to 20 mA
2.551
Ic = 15 mA
18e-12
1.0e-9
1.73e-9
0.14
0.75
0.55
0.03
1.00
1.11
2.626
Q2
0.5
0.1
0
0
2
0
0
3
0