AT-42010 Avago Technologies US Inc., AT-42010 Datasheet

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... GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42010 is a general purpose NPN bipolar tran- sistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications ...

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... AT-42010 Absolute Maximum Ratings Symbol Parameter V Emitter-Base Voltage EBO V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C [,3] P Power Dissipation T T Junction Temperature j T Storage Temperature STG Electrical Specifications 25°C A Symbol Parameters and Test Conditions  |S | Insertion Power Gain; V 1E P Power Output @ 1 dB Gain Compression ...

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... AT-42010 Typical Performance 25° 1.0 GHz 16 2.0 GHz 12 8 4.0 GHz (mA) C Figure 1. Insertion Power Gain vs. Collector Current and Frequency MSG 25 20 MAG 21E 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. ...

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... AT-42010 Typical Scattering Parameters, Common Emitter Ω 5° Freq GHz Mag. Ang. 0.1 .74 -47 0.5 .65 -136 1.0 .63 -168 1.5 .63 174 .0 .63 161 .5 .64 154 3.0 .65 145 3.5 .66 136 4.0 .66 16 4.5 .66 115 5.0 .66 103 5.5 .68 90 6.0 .7 81 AT-42010 Typical Scattering Parameters, Common Emitter Ω ...

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... For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-00EN ...