AT-42010 Avago Technologies US Inc., AT-42010 Datasheet - Page 2

• Manufacturer Part Number: AT-42010
• Description: TRANS NPN BIPO 12V 80MA 100-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42010

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10dB ~ 13.5dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 600mW
• Dc Collector Current: 80mA
• Dc Current Gain Hfe: 150
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AT-42010 Absolute Maximum Ratings
Symbol
Electrical Specifications, T

Notes:
1. For this test, the emitter is grounded.
Symbol
V
V
V
T
|S
P
G
NF
G
f
h
I
I
C
P
CBO
EBO
CBO
T
EBO
CEO
I
T
STG
CB
1 dB
1 dB
A
FE
C
1E
T
j
O
|

Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameters and Test Conditions
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
A
O
C
= 25°C
; V
= 35 mA
CE
= 8 V, I
[,3]
CE
C
[1]
EB
CE
CE
= 10 mA
= 8 V, I
CB
[1]
= 1 V
= 8 V, I
CE
= 8 V, I
= 8 V
: V
= 8 V, I
CB
CE
C
= 8 V, f = 1 MHz
C
= 35 mA
C
= 8 V, I
[1]
= 35 mA
= 10 mA
C
= 35 mA
Units
mW
mA
°C
°C
V
V
V
C
= 35 mA
Maximum
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f= 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
-65 to 00
Absolute
600
00
1.5
0
1
80
Units
Thermal Resistance
Notes:
1. Permanent damage may occur if any of
2. Tcase = 25°C.
3. Derate at 6.7 mW/°C for Tc > 110°C.
4. The small spot size of this technique results
dBm
GHz
—
θ
dB
dB
dB
dB
µA
µA
pF
jc
these limits are exceeded.
in a higher, though more accurate determi-
nation of θjc than do alternate methods.
See MEASUREMENTS section “Thermal Re-
sistance” for more information.
= 150°C/W
Min.
10.5
0.5
10.0
5.5
9.5
3.0
30
[2,4]
:
Typ.
11.5
1.0
14.0
13.5
0.8
150
1.9
8.0
Max.
70
0.
.0