HFA3127BZ Intersil, HFA3127BZ Datasheet - Page 4

• Manufacturer Part Number: HFA3127BZ
• Description: IC TRANSISTOR ARRAY UHF 16-SOIC
• Manufacturer: Intersil

Specifications of HFA3127BZ

• Transistor Type: 5 NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 3.5dB @ 1GHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 2V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Module Configuration: Five
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 8V
• Transition Frequency Typ Ft: 8GHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 37mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -

Electrical Specifications
Electrical Specifications
Electrical Specifications
Power Gain-Bandwidth Product,
f
Base to Emitter Capacitance
Collector to Base Capacitance
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Emitter to Base Breakdown
Voltage, V
Collector Cutoff Current, I
Collector Cutoff Current, I
Collector to Emitter Saturation
Voltage, V
Base to Emitter Voltage, V
DC Forward-Current Transfer
Ratio, h
Early Voltage, V
Base to Emitter Voltage Drift
Collector to Collector Leakage
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f
Product
Power Gain-Bandwidth
Product
Base to Emitter Capacitance
Collector to Base Capacitance
MAX
T
Current Gain-Bandwidth
FE
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
CE(SAT)
PARAMETER
PARAMETER
PARAMETER
A
CEO
CBO
BE
4
T
T
T
A
A
A
I
V
V
I
I
I
I
V
V
I
I
I
I
I
f = 1.0GHz, V
I
I
I
I
V
V
= 25°C (Continued)
C
= 25°C
C
C
C
E
C
C
C
C
C
= 25°C
C
C
C
C
BE
CB
CE
CB
BE
CB
= 10mA, V
= -100µA, I
= -100µA, I
= -100µA, Base Shorted to Emitter
= -10µA, I
= -10mA, I
= -10mA
= -10mA, V
= -1mA, V
= -10mA
= -5mA, Z
= -1mA, V
= -10mA, V
= -10mA, V
HFA3046, HFA3096, HFA3127, HFA3128
= -3V
= 3V
= 3V
= -6V, I
= -8V, I
= -3V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
B
E
C
S
CE
CE
B
CE
CE
E
B
= 0
= 0
CE
CE
CE
= 0
= 50Ω
= -1mA
= 0
= 0
= -3.5V
= -5V
= 5V
= -5V,
= -2V
= -5V
= -5V
MIN
MIN
MIN
4.5
10
10
20
10
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
TYP
0.85
TYP
-1.5
DIE
200
200
DIE
DIE
200
300
0.1
0.3
3.5
5.5
15
15
15
60
20
6
5
2
1
2
3
MAX
MAX
MAX
0.95
100
0.5
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
MIN
MIN
4.5
10
10
20
10
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOIC, QFN
SOIC, QFN
SOIC, QFN
TYP
TYP
0.85
TYP
500
500
-1.5
500
600
2.5
0.1
0.3
3.5
5.5
15
15
15
60
20
5
2
1
2
2
MAX
MAX
MAX
0.95
100
0.5
10
December 21, 2005
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FN3076.13
UNITS
UNITS
UNITS
mV/°C
GHz
GHz
GHz
GHz
nA
nA
pA
dB
fF
fF
fF
fF
V
V
V
V
V
V
V