HFA3127BZ Intersil, HFA3127BZ Datasheet - Page 4
![IC TRANSISTOR ARRAY UHF 16-SOIC](/photos/5/65/56533/20-16-soic_sml.jpg)
HFA3127BZ
Manufacturer Part Number
HFA3127BZ
Description
IC TRANSISTOR ARRAY UHF 16-SOIC
Manufacturer
Intersil
Datasheet
1.HFA3046B.pdf
(13 pages)
Specifications of HFA3127BZ
Transistor Type
5 NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
3.5dB @ 1GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 2V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Module Configuration
Five
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
8V
Transition Frequency Typ Ft
8GHz
Power Dissipation Pd
150mW
Dc Collector Current
37mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HFA3127BZ
Manufacturer:
Intersil
Quantity:
528
Part Number:
HFA3127BZ
Manufacturer:
INTELS
Quantity:
20 000
Electrical Specifications
Electrical Specifications
Electrical Specifications
Power Gain-Bandwidth Product,
f
Base to Emitter Capacitance
Collector to Base Capacitance
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Collector to Emitter Breakdown
Voltage, V
Emitter to Base Breakdown
Voltage, V
Collector Cutoff Current, I
Collector Cutoff Current, I
Collector to Emitter Saturation
Voltage, V
Base to Emitter Voltage, V
DC Forward-Current Transfer
Ratio, h
Early Voltage, V
Base to Emitter Voltage Drift
Collector to Collector Leakage
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f
Product
Power Gain-Bandwidth
Product
Base to Emitter Capacitance
Collector to Base Capacitance
MAX
T
Current Gain-Bandwidth
FE
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
CE(SAT)
PARAMETER
PARAMETER
PARAMETER
A
CEO
CBO
BE
4
T
T
T
A
A
A
I
V
V
I
I
I
I
V
V
I
I
I
I
I
f = 1.0GHz, V
I
I
I
I
V
V
= 25°C (Continued)
C
= 25°C
C
C
C
E
C
C
C
C
C
= 25°C
C
C
C
C
BE
CB
CE
CB
BE
CB
= 10mA, V
= -100µA, I
= -100µA, I
= -100µA, Base Shorted to Emitter
= -10µA, I
= -10mA, I
= -10mA
= -10mA, V
= -1mA, V
= -10mA
= -5mA, Z
= -1mA, V
= -10mA, V
= -10mA, V
HFA3046, HFA3096, HFA3127, HFA3128
= -3V
= 3V
= 3V
= -6V, I
= -8V, I
= -3V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
B
E
C
S
CE
CE
B
CE
CE
E
B
= 0
= 0
CE
CE
CE
= 0
= 50Ω
= -1mA
= 0
= 0
= -3.5V
= -5V
= 5V
= -5V,
= -2V
= -5V
= -5V
MIN
MIN
MIN
4.5
10
10
20
10
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
TYP
0.85
TYP
-1.5
DIE
200
200
DIE
DIE
200
300
0.1
0.3
3.5
5.5
15
15
15
60
20
6
5
2
1
2
3
MAX
MAX
MAX
0.95
100
0.5
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
MIN
MIN
4.5
10
10
20
10
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOIC, QFN
SOIC, QFN
SOIC, QFN
TYP
TYP
0.85
TYP
500
500
-1.5
500
600
2.5
0.1
0.3
3.5
5.5
15
15
15
60
20
5
2
1
2
2
MAX
MAX
MAX
0.95
100
0.5
10
December 21, 2005
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FN3076.13
UNITS
UNITS
UNITS
mV/°C
GHz
GHz
GHz
GHz
nA
nA
pA
dB
fF
fF
fF
fF
V
V
V
V
V
V
V