BFR 93AW E6327 Infineon Technologies, BFR 93AW E6327 Datasheet - Page 7

• Manufacturer Part Number: BFR 93AW E6327
• Description: TRANSISTOR NPN RF 12V SOT-323
• Manufacturer: Infineon Technologies

Specifications of BFR 93AW E6327

• Package / Case: SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 15.5dB
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 90mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR93AWE6327; BFR93AWE6327XT; SP000011071

Datasheet Revision History: 9 August 2010
This datasheet replaces the revision from 26 April 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision 26 April 2007
Page
2,3
1
4
Subject (changes since last revision)
Datasheet has final status
Bias conditions for I
SPICE model parameters removed from the datasheet, respective link to the
internet site added
EBO
and f
T
corrected
7
BFR93AW
2010-08-09