BF 799 E6327 Infineon Technologies, BF 799 E6327 Datasheet - Page 3

• Manufacturer Part Number: BF 799 E6327
• Description: TRANSISTOR NPN RF 20V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BF 799 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 800MHz
• Noise Figure (db Typ @ F): 3dB @ 100MHz
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 1100 MHz
• Collector- Emitter Voltage Vceo Max: 20 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000010973

Total power dissipation P
Permissible Pulse Load R
K/W
mW
10
10
10
10
320
240
200
160
120
80
40
0
3
2
1
0
10
0
-7
15
10
30
-6
10
45
-5
60
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
-4
75
10
90 105 120
tot
thJS
-3
= f(T
10
= f (t
-2
S
)
p
T
t
°C
s
p
)
S
150
10
0
3
Permissible Pulse Load
P
totmax
10
10
10
10
-
3
2
1
0
10
/P
-6
totDC
10
-5
= f (t
10
p
-4
)
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
2007-04-20
-2
BF799
s
t
p
10
0