BFR 380F H6327 Infineon Technologies, BFR 380F H6327 Datasheet

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BFR 380F H6327

Manufacturer Part Number
BFR 380F H6327
Description
TRANS RF NPN 6V 80MA TSFP-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 380F H6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
9V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain
9.5dB ~ 13.5dB
Power - Max
380mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 40mA, 3V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
TSFP-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR380FH6327XT
NPN Silicon RF Transistor
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFR380F
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
High linearity low noise driver amplifier
Output compression point 19.5 dBm @ 1.8 GHz
Ideal for oscillators up to 3.5 GHz
Low noise figure 1.1 dB at 1.8 GHz
Collector design supports 5V supply voltage
Pb-free (RoHS compliant) package
Qualified according AEC Q101
95°C
thJA
please refer to Application Note AN077 Thermal Resistance
1)
2)
Marking
FCs
1 = B
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
B
CEO
CES
CBO
EBO
tot
J
A
Stg
thJS
2 = E
3 = C
-65 ... 150
-65 ... 150
Value
Value
380
150
15
15
80
14
145
3
6
2
Package
TSFP-3
1
2010-09-13
BFR380F
2
Unit
V
mA
mW
°C
Unit
K/W

Related parts for BFR 380F H6327

BFR 380F H6327 Summary of contents

Page 1

NPN Silicon RF Transistor High linearity low noise driver amplifier Output compression point 19.5 dBm @ 1.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure 1 1.8 GHz Collector design supports 5V supply voltage Pb-free ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 0.1 ...

Page 5

Third order Intercept Point IP (Output = parameter 1.8GHz CE 32 dBm ...

Page 6

Power Gain parameter 40mA 0.5 1 1.5 2 2.5 Power Gain ...

Page 7

Minimum noise figure 3V Sopt 3.5 3 2.5 2 1 [mA] c Minimum noise figure 3V ...

Page 8

SPICE GP (Gummel-Poon) For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-3 1.2 ±0.05 0.2 0.55 ±0.05 ±0. 0.2 0.15 ±0.05 0.4 ±0.05 0.4 ...

Page 10

Datasheet Revision History: 13 September 2010 This datasheet replaces the revision from 20 May 2010. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been ...

Page 11

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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