BFP 183W H6327 Infineon Technologies, BFP 183W H6327 Datasheet - Page 3

• Manufacturer Part Number: BFP 183W H6327
• Description: TRANS RF NPN 12V SOT343
• Manufacturer: Infineon Technologies

Specifications of BFP 183W H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
• Gain: 22dB
• Power - Max: 450mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum stable
I
f = 900 MHz
Power gain, maximum available
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 MHz
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 ), G ms = | S 21 / S 12 |
CB
CE
EB
= 25 mA, V
= 5 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
CE
CE
CE
CE
CE
= 8 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
S
BE
BE
S
S
S
CB
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
1)
Sopt
Sopt
L
A
1)
= 50
,
= 25°C, unless otherwise specified
, Z
, Z
L
L
= Z
= Z
,
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
F
G
G
|S
T
cb
ce
eb
ms
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
17.5
11.5
0.34
0.27
15.5
typ.
1.1
0.9
1.4
22
8
2007-04-20
max.
0.54
BFP183W
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dB
dB