BFR 182W H6327 Infineon Technologies, BFR 182W H6327 Datasheet - Page 2

• Manufacturer Part Number: BFR 182W H6327
• Description: TRANS RF NPN 12V 35MA SOT323
• Manufacturer: Infineon Technologies

Specifications of BFR 182W H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 8V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR182WH6327XT

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
(verified by random sampling)
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CE
CB
EB
= 1 mA, I
= 10 mA, V
= 1 V, I
= 4 V, V
= 15 V, V
= 4 V, I
B
C
E
BE
= 0
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0 V, T
A
= 85 °C
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
-
Values
typ.
100
1
5
1
-
-
max.
140
30
70
30
50
BFR182W
2010-04-06
-
Unit
V
nA
-