BFP 460 E6433 Infineon Technologies, BFP 460 E6433 Datasheet - Page 2
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BFP 460 E6433
Manufacturer Part Number
BFP 460 E6433
Description
TRANS RF NPN 4.5V 50MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BFP_460_E6433.pdf
(11 pages)
Specifications of BFP 460 E6433
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.8V
Frequency - Transition
22GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain
12.5dB ~ 26.5dB
Power - Max
230mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 20mA, 3V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
V
Verified by random sampling
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
V
1
C
For calculation of R
CE
CE
CE
CB
CB
EB
CE
= 1 mA, I
= 0,5 V, I
= 15 V, V
= 2 V, V
= 5 V, V
= 2 V, I
= 5 V, I
= 3 V, I
B
E
E
C
BE
BE
= 0
C
= 0
= 0
= 20 mA , pulse measured
BE
= 0
= 0
= 0 , T
thJA
= 0
please refer to Application Note AN077 Thermal Resistance
A
= 85°C
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
4.5
90
-
-
-
-
-
-
Values
Value
≤ 250
typ.
120
5.8
1
2
1
1
-
-
max.
1000
2010-05-17
500
160
30
40
30
30
-
BFP460
Unit
V
nA
-
Unit
K/W