BFR 193L3 E6327 Infineon Technologies, BFR 193L3 E6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 193L3 E6327
• Description: TRANSISTOR RF NPN 12V TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 193L3 E6327

• Package / Case: TSLP-3-1
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 12.5dB ~ 19dB
• Power - Max: 580mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 580 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR193L3E6327XT; SP000013557

Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Power gain, maximum available
I
Z
I
Z
1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
C
C
G
C
C
C
C
C
L
L
CB
CE
EB
ma
= 30 mA, V
= 30 mA, V
= 50 mA, V
= 10 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= | S
Lopt
Lopt
21
/ S
, f = 900 MHz
, f = 1.8 GHz
12
CE
CE
CE
CE
CE
CE
CE
| (k-(k²-1)
= 8 V, Z
= 8 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
1/2 )
BE
BE
S
S
CB
S
S
S
S
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
1)
= 50
= 50
= 25°C, unless otherwise specified
,
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
12.5
14.5
0.63
0.22
2.25
typ.
1.6
19
8
1
9
max.
BFR193L3
0.9
2007-03-30
-
-
-
-
-
-
-
-
-
GHz
pF
dB
Unit
dB