BFP 196R E6327 Infineon Technologies, BFP 196R E6327 Datasheet

TRANS RF NPN 12V 150MA SOT143

BFP 196R E6327

Manufacturer Part Number
BFP 196R E6327
Description
TRANS RF NPN 12V 150MA SOT143
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 196R E6327

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
7.5GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain
10.5dB ~ 16.5dB
Power - Max
700mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 50mA, 8V
Current - Collector (ic) (max)
150mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
70
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Maximum Operating Frequency
7.5 GHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
150 mA
Power Dissipation
700 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP196RE6327XT
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP196
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
For low noise, low distortion broadband
Power amplifier for DECT and PCN systems
f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
T
= 7.5 GHz, F = 1.3 dB at 900 MHz
77°C
thJA
Marking
RIs
please refer to Application Note Thermal Resistance
2)
3)
1 = C 2 = E 3 = B 4 = E -
1)
Pin Configuration
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
4
-65 ... 150
-65 ... 150
-
3
Value
Value
150
700
150
12
20
20
15
105
2
Package
SOT143
2007-04-20
BFP196
1
Unit
V
mA
mW
°C
Unit
K/W
2

Related parts for BFP 196R E6327

BFP 196R E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from Power amplifier for DECT and PCN systems f = 7.5 GHz, ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

... MJS = 3 XTI = - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www ...

Page 5

Total power dissipation P tot 800 mW 600 500 400 300 200 100 Permissible Pulse Load totmax totDC 0.005 0.01 ...

Page 6

Package Outline 0.8 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT143 2.9 ±0 0.2 +0.1 -0.05 +0.1 0.4 -0.05 ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords