BFP 196W H6327 Infineon Technologies, BFP 196W H6327 Datasheet - Page 3

• Manufacturer Part Number: BFP 196W H6327
• Description: TRANS RF NPN 12V 150MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BFP 196W H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 7.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
• Gain: 12.5dB ~ 19dB
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 8V
• Current - Collector (ic) (max): 150mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
Z
I
Z
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
C
C
C
C
C
C
C
G
L
L
CB
CE
EB
ma
= 70 mA, V
= 20 mA, V
= 20 mA, V
= 50 mA, V
= 50 mA, V
= 50 mA, V
= 50 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= | S
Lopt
Lopt
21
/ S
, f = 900 MHz
, f = 1.8 GHz
12
CE
CE
CE
CE
CE
CE
CE
| (k-(k²-1)
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
1/2 )
BE
BE
S
S
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
1)
= 50
= 50
= 25°C, unless otherwise specified
,
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
5
-
-
-
-
-
-
-
-
-
Values
12.5
0.86
typ.
7.5
0.4
3.9
1.3
2.3
19
13
7
2007-04-20
max.
1.3
BFP196W
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB