BFP520E6327 Infineon Technologies, BFP520E6327 Datasheet

TRANS NPN RF 2.5V SOT-343

BFP520E6327

Manufacturer Part Number
BFP520E6327
Description
TRANS NPN RF 2.5V SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP520E6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
45GHz
Noise Figure (db Typ @ F)
0.95dB @ 1.8GHz
Gain
24dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP520
BFP520E6327XT
BFP520INTR
BFP520XTINTR
BFP520XTINTR
SP000012229

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFP520E6327
Manufacturer:
NS
Quantity:
8 866
Part Number:
BFP520E6327
Manufacturer:
INFINEON
Quantity:
3 875
NPN Silicon RF Transistor
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFP520
Maximum Ratings at T
Parameter
Collector-emitter voltage
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Storage temperature
1
T
A
S
Low noise amplifier designed for low voltage
High gain and low noise at high frequencies
Finds usage e.g. in cordless phones and
Pb-free (RoHS compliant) standard package
Qualified according AEC Q101
applications, ideal for 1.2 V or 1.8 V supply
voltage. Supports 2.9 V V
collector resistance.
due to high transit frequency f
satellite receivers
with visible leads
S
= -55 °C
is measured on the emitter lead at the soldering point to pcb
105 °C
Marking
APs
1)
A
= 25 °C, unless otherwise specified
cc
with enough external
1=B
T
= 45 GHz
2=E
Pin Configuration
3=C
Symbol
V
V
V
V
I
I
P
T
T
C
B
CEO
CES
CBO
EBO
tot
J
Stg
4=E
-
4
-55 ... 150
-
3
Value
100
150
2.5
2.4
10
10
40
1
4
Package
SOT343
2010-08-16
BFP520
1
2
Unit
V
mA
mW
°C

Related parts for BFP520E6327

BFP520E6327 Summary of contents

Page 1

NPN Silicon RF Transistor Low noise amplifier designed for low voltage applications, ideal for 1 1.8 V supply voltage. Supports 2 collector resistance. High gain and low noise at high frequencies due to high transit frequency ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P 120 mW 100 Third order Intercept Point IP (Output parameter, f ...

Page 5

Power gain |S21|² Power ...

Page 6

Noise figure 1.8 GHz 1 50Ohm Zs = Zsopt 0 Source impedance for min. noise figure ...

Page 7

SPICE GP Model For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. ...

Page 8

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 9

Datasheet Revision History: 16 August 2010 This datasheet replaces the revision from 30 March 2007 and 28 June 2010. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in ...

Page 10

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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