BFP 520F H6327 Infineon Technologies, BFP 520F H6327 Datasheet - Page 3

• Manufacturer Part Number: BFP 520F H6327
• Description: TRANS RF NPN 2.5V 40MA TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 520F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (db Typ @ F): 0.95dB @ 1.8GHz
• Gain: 22.5dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 1.8 GHz
Power gain, maximum stable
I
f = 1.8 GHz
Insertion power gain
V
Z
Third order intercept point at output
V
Z
1dB Compression point
I
f = 1.8 GHz
C
C
C
C
G
S
S
CB
CE
EB
CE
CE
ms
= 30 mA, V
= 2 mA, V
= 20 mA, V
= 20 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
= 2 V, I
= |S
L
Sopt,
21
= 50
/ S
Z
C
C
CE
L
12
CE
CE
= 20 mA, f = 1.8 GHz,
= 20 mA, f = 1.8 GHz,
CE
= Z
|
= 2 V, Z
= 2 V, f = 2 GHz
= 2 V, Z
= 2 V, Z
Lopt
BE
BE
S
S
S
CB
= Z
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
Sopt
1)
Sopt
Sopt,
A
,
= 25°C, unless otherwise specified
, Z
Z
L
L
= Z
= Z
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
F
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
21
3
|
2
min.
32
-
-
-
-
-
-
-
-
Values
22.5
20.5
23.5
10.5
0.07
0.25
0.31
0.95
typ.
45
2007-03-30
max.
0.14
BFP520F
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dBm