BFS 483 E6327 Infineon Technologies, BFS 483 E6327 Datasheet - Page 5

TRANSISTOR RF NPN 12V SOT-363

BFS 483 E6327

Manufacturer Part Number
BFS 483 E6327
Description
TRANSISTOR RF NPN 12V SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFS 483 E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain
19dB
Power - Max
450mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 15mA, 8V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
8 GHz
Collector- Emitter Voltage Vceo Max
12 V
Continuous Collector Current
0.065 A
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFS483E6327XT
SP000011086
Package Outline
Foot Print
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Pin 1
marking
Pin 1 marking
Laser marking
Pin 1
marking
0.65
6
1
0.2
2
±0.2
+0.1
-0.05
P
0.65
5
2
ackage SOT363
4
3
2.15
0.65
6x
4
0.1
0.3
M
5
0.65
0.1 MAX.
0.2
0.1
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
M
A
0.2
0.9
0.15
1.1
±0.1
+0.1
-0.05
A
2007-04-26
BFS483

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