BFY193 (P) Infineon Technologies, BFY193 (P) Datasheet - Page 2
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BFY193 (P)
Manufacturer Part Number
BFY193 (P)
Description
TRANS RF NPN 12V 80MA MICRO-X1
Manufacturer
Infineon Technologies
Datasheet
1.BFY193_P.pdf
(4 pages)
Specifications of BFY193 (P)
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
7.5GHz
Noise Figure (db Typ @ F)
2.3dB ~ 2.9dB @ 2GHz
Gain
12.5dB ~ 13.5dB
Power - Max
580mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 30mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
MICRO-X1
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
80 mA
Power Dissipation
580 mW
Maximum Operating Temperature
+ 200 C
Dc Collector/base Gain Hfe Min
50 at 30 mA at 8 V
Gain Bandwidth Product Ft
8 GHz
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package
Micro-X
Comment
Replaced by BFY193C
Vceo (max)
12.0 V
Ic(max)
80.0 mA
Ptot (max)
580.0 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Maximum Ratings
Thermal Resistance
Notes.:
1) The maximum permissible base current for V
measurement duration < 1s)
2) At T
3) T
Electrical Characteristics
at T
Notes:
1.) This Test assures V(BR)
IFAG IMM RPD D HIR
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
Junction temperature
Operating temperature range
Storage temperature range
Junction-soldering point
Parameter
DC Characteristics
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter base cuttoff current
V
Emitter base cuttoff current
V
S
CB
CE
CB
EB
EB
A
S
104°C
=25°C; unless otherwise specified
= 20 V, I
= 12 V, I
= 10 V, I
= 2 V, I
= 1 V, I
is measured on the collector lead at the soldering point to the pcb.
S
= + 104 °C. For T
C
C
E
B
E
= 0
= 0
2), 3)
= 0
= 0,5µA
= 0
1.)
3)
S
> + 104 °C derating is required.
CE0
BE
=0
> 12V
Symbol
V
V
V
V
I
I
P
T
T
T
R
Symbol
I
I
I
I
I
CBO
CEX
CBO
EBO
EBO
C
B
CEO
CES
CBO
EBO
tot
j
op
stg
th JS
2 of 4
FBE
measurements is 30mA (spot-
min.
-
-
-
-
-
Values
12
20
20
2
80
10
580
200
-65...+200
-65...+200
< 165
1)
Values
typ.
-
-
-
-
-
max.
100
600
50
25
0.5
V2, February 2011
Unit
µA
µA
nA
A
A
BFY193
Unit
V
V
V
V
mA
mA
mW
C
C
C
K/W