FPNH10 Fairchild Semiconductor, FPNH10 Datasheet
FPNH10
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FPNH10 Summary of contents
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... Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2000 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 3 °C -55 to +150 Max Units FPNH10 350 mW 2.8 mW/°C °C/W 125 °C/W 357 FPNH10 Rev. A ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Sustaining Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation ...
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Typical Characteristics Typical Pulsed Current Gain vs Collector Current 100 Vce = 5V 80 125 ° ° °C 0 0.1 0.2 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage ...
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Common Base Y Parameters vs. Frequency Input Admittance 120 10V - -80 -120 100 200 500 f - FREQUENCY (MHz Forward Transfer ...
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Common Emitter Y Parameters vs. Frequency Input Admittance 10V 100 200 500 f - FREQUENCY (MHz) Forward Transfer Admittance ...
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Test Circuits 2.0 KΩ Ω Ω Ω Ω T1 1000 pF L1 Input 50 Ω Ω Ω Ω Ω 1000 FIGURE 1: Neutralized 200 MHz pF and NF Circuit 50 pF (NOTE 2) RFC 1000 pF 2.2 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...