FPNH10 Fairchild Semiconductor, FPNH10 Datasheet - Page 3
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FPNH10
Manufacturer Part Number
FPNH10
Description
TRANSISTOR RF NPN 25V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.FPNH10.pdf
(7 pages)
Specifications of FPNH10
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FPNH10
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
100
0.1
10
80
60
40
20
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
25
0.1
1
0.1
Vce = 5V
Typical Pulsed Current Gain
Voltage vs Collector Current
V = 30V
0.2
CB
β = 10
vs Ambient Temperature
Collector-Cutoff Current
Base-Emitter Saturation
125 °C
vs Collector Current
I - COLLECTOR CURRENT (mA)
25 °C
T - AMBIENT TEMPERATURE ( C)
I
- 40 °C
50
C
C
A
- 40 °C
- COLLECTOR CURRENT (mA)
0.5
1
75
25 °C
1
2
125 °C
100
5
10
125
°
20
10
20
50
150
35 0
30 0
25 0
20 0
15 0
10 0
0.15
0.05
0.8
0.6
0.4
0.2
5 0
0.2
0.1
1
0.01
0
0
0.1
Voltage vs Collector Current
V
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
CE
vs. Amb ien t Tem pe ra ture
- 40 °C
β = 10
= 5V
2 5
I
I
C
Po we r D iss ip ation
C
Collector Current
0.1
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
T - T EMPE RATUR E ( C)
- 40 °C
A
5 0
25 °C
P 42
1
NPN RF Transistor
7 5
1
25 °C
TO-9 2
10 0
o
125 °C
10
125 °C
12 5
10
(continued)
15 0
100
20