FPNH10 Fairchild Semiconductor, FPNH10 Datasheet - Page 3

• Manufacturer Part Number: FPNH10
• Description: TRANSISTOR RF NPN 25V 50MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of FPNH10

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -

Typical Characteristics
100
0.1
10
80
60
40
20
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
25
0.1
1
0.1
Vce = 5V
Typical Pulsed Current Gain
Voltage vs Collector Current
V = 30V
0.2
CB
β = 10
vs Ambient Temperature
Collector-Cutoff Current
Base-Emitter Saturation
125 °C
vs Collector Current
I - COLLECTOR CURRENT (mA)
25 °C
T - AMBIENT TEMPERATURE ( C)
I
- 40 °C
50
C
C
A
- 40 °C
- COLLECTOR CURRENT (mA)
0.5
1
75
25 °C
1
2
125 °C
100
5
10
125
°
20
10
20
50
150
35 0
30 0
25 0
20 0
15 0
10 0
0.15
0.05
0.8
0.6
0.4
0.2
5 0
0.2
0.1
1
0.01
0
0
0.1
Voltage vs Collector Current
V
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
CE
vs. Amb ien t Tem pe ra ture
- 40 °C
β = 10
= 5V
2 5
I
I
C
Po we r D iss ip ation
C
Collector Current
0.1
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
T - T EMPE RATUR E ( C)
- 40 °C
A
5 0
25 °C
P 42
1
NPN RF Transistor
7 5
1
25 °C
TO-9 2
10 0
o
125 °C
10
125 °C
12 5
10
(continued)
15 0
100
20