NE85633-T1B CEL, NE85633-T1B Datasheet - Page 17
![TRANS NPN 1GHZ SOT-23](/photos/5/65/56514/51-sot-23_sml.jpg)
NE85633-T1B
Manufacturer Part Number
NE85633-T1B
Description
TRANS NPN 1GHZ SOT-23
Manufacturer
CEL
Datasheet
1.NE85619-T1-A.pdf
(26 pages)
Specifications of NE85633-T1B
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 1GHz
Gain
9dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
2SC3356
NE85633-T1BTR
NE85633-TR
NE85633TR
NE85633-T1BTR
NE85633-TR
NE85633TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE85633-T1B
Manufacturer:
INTERSIL
Quantity:
5 516
Company:
Part Number:
NE85633-T1B-R25-A
Manufacturer:
CEL
Quantity:
3 000
Part Number:
NE85633-T1B-R25-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
NE85619 NONLINEAR MODEL
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
SCHEMATIC
BJT NONLINEAR MODEL PARAMETERS
Parameters
RBM
VAR
CJE
MJE
CJC
VAF
VJE
ISE
ISC
IRB
VJC
IKF
NR
NC
RC
BR
IKR
RE
RB
BF
NF
NE
IS
3.2e-15
1.96e-4
2.8e-12
1.1e-12
6e-16
0.991
0.98
0.08
1.93
0.17
0.38
4.16
120
Q1
3.9
3.6
1.3
0.5
0.7
10
12
0
2
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
Base
XTF
VTF
FC
EG
TF
ITF
XTI
KF
TR
AF
L
BX
(1)
10e-12
1e-9
0.55
0.75
1.11
0.3
0.5
0.2
Q1
10
L
0
0
6
0
0
3
0
1
B
C
C
CBPKG
CB
Emitter
L
UNITS
L
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
E
EX
C
CE
Parameter
time
capacitance
inductance
resistance
voltage
current
Parameters
C
C
L
L
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
Q1
V
0.05 to 3.0 GHz
CE
C
L
CEPKG
CX
= 2.5 V to 10 V, I
Collector
C
= 0.3 mA to 10 mA
0.087e-12
0.16e-12
1.84e-9
0.56e-9
0.08e-12
0.39e-12
0.19e-9
0.19e-9
0.19e-9
NE85619
NE856 SERIES
seconds
farads
henries
ohms
volts
amps
Units