NE85633-T1B CEL, NE85633-T1B Datasheet - Page 22
![TRANS NPN 1GHZ SOT-23](/photos/5/65/56514/51-sot-23_sml.jpg)
NE85633-T1B
Manufacturer Part Number
NE85633-T1B
Description
TRANS NPN 1GHZ SOT-23
Manufacturer
CEL
Datasheet
1.NE85619-T1-A.pdf
(26 pages)
Specifications of NE85633-T1B
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
7GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 1GHz
Gain
9dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-23
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
2SC3356
NE85633-T1BTR
NE85633-TR
NE85633TR
NE85633-T1BTR
NE85633-TR
NE85633TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NE85633-T1B
Manufacturer:
INTERSIL
Quantity:
5 516
Company:
Part Number:
NE85633-T1B-R25-A
Manufacturer:
CEL
Quantity:
3 000
Part Number:
NE85633-T1B-R25-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
1. Collector
2. Emitter
3. Base
4. Emitter
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
2.0 ± 0.2
1.6 ± 0.1
0.75 ± 0.05
0.9 ± 0.1
1.0
(Chip Thickness: 140 to 160 μm)
0.65
0.60
0.5
BASE
0.6
0.4
0.3
0.2
PACKAGE OUTLINE 18
+0.10
PACKAGE OUTLINE 19
-0.05
+0.1
2
-
1
0
NE85600 (CHIP)
0.35
0.30
0.22
2
1
(SOT-343)
1.6 ± 0.1
0.8 ± 0.1
1.25 ± 0.1
2.1 ± 0.2
(Units in mm)
0 to 0.1
EMITTER
0.07φ
0 to 0.1
3
3
4
0.65
0.65
0.15
0.3
0.3
(LEADS 2, 3, 4)
LEAD 3 ONLY
+0.10
0.15
+0.10
-0.05
-0.05
+0.1
-0.05
1.3
.112
+0.10
-0.05
0.35
0.6
1.25
1
2
RECOMMENDED P.C.B. LAYOUT
RECOMMENDED P.C.B. LAYOUT
1
2
0.6
PACKAGE OUTLINE 19
PACKAGE OUTLINE 18
1.3
1.7
0.8
NE856 SERIES
3
3
4
0.5
0.6
1.0