NE687M33-A CEL, NE687M33-A Datasheet - Page 2

• Manufacturer Part Number: NE687M33-A
• Description: TRANSISTOR NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NE687M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 90mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 1V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
h
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
h
Marking
FE
RANK
CLASSIFICATION
Value
2. Collector to base capacitance when the emitter grounded
PARAMETER
70 to 140
W2
FB
SYMBOL
h
C
|S
FE
re
I
I
NF
CBO
EBO
f
21e
Note 2
Note 1
T
|
2
V
V
V
V
V
V
Z
V
S
CB
EB
CE
CE
CE
CE
CB
(T
= Z
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
A
opt
=+25ºC)
TEST CONDITIONS
C
E
C
C
C
C
= 0 mA
= 0 mA
= 10 mA
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
C
= 0 mA, f = 1 MHz
MIN.
70
10
–
–
7
–
–
TYP.
110
1.5
0.4
12
–
–
9
MAX.
100
100
140
2.0
0.7
–
–
UNIT
GHz
nA
nA
dB
dB
pF
–