NE687M33-A CEL, NE687M33-A Datasheet - Page 3

• Manufacturer Part Number: NE687M33-A
• Description: TRANSISTOR NPN 2GHZ M33
• Manufacturer: CEL

Specifications of NE687M33-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 90mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 1V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS
Remark The graphs indicate nominal characteristics.
0.0001
0.001
0.01
250
200
150
100
100
0.1
50
10
30
20
15
10
35
25
90
0
1
5
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500 A
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
450 A
CE
µ
Collector to Emitter Voltage V
0.5
25
= 1 V
Base to Emitter Voltage V
µ
Ambient Temperature T
1
Mounted on Glass Epoxy PCB
(1.08 cm
400 A
0.6
50
µ
2
75
× 1.0 mm (t) )
0.7
2
350 A
µ
100
0.8
(T
A
BE
3
A
(ºC)
I
CE
B
(V)
=+25ºC, unless otherwise specified)
125
= 50 A
0.9
(V)
300 A
250 A
200 A
150 A
100 A
µ
µ
µ
µ
µ
µ
150
1.0
4
0.0001
0.001
0.01
100
0.6
0.5
0.4
0.3
0.2
0.1
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.5
= 2 V
Collector to Base Voltage V
Base to Emitter Voltage V
1
0.6
2
0.7
3
0.8
f = 1 MHz
BE
CB
(V)
4
0.9
(V)
1.0
5