NE851M03-A CEL, NE851M03-A Datasheet - Page 3

• Manufacturer Part Number: NE851M03-A
• Description: TRANSISTOR NPN 2GHZ SOT-363
• Manufacturer: CEL

Specifications of NE851M03-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 4.5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2.5dB @ 2GHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 1V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 145
• Mounting Style: SMD/SMT
• Configuration: Single
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
35
30
25
20
15
10
10
35
30
25
20
15
10
8
6
4
2
0
5
0
0.1
5
0
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
= 1 V
vs. COLLECTOR CURRENT
INSERTION POWER GAIN vs.
INSERTION POWER GAIN vs.
Collector Current, I
Frequency, f (GHz)
Frequency, f (GHz)
FREQUENCY
FREQUENCY
10
1
1
C
(mA)
V
I
V
I
C
C
CE
CE
= 5 mA
= 15 mA
= 1 V
= 1 V
100
10
10
(T
A
= 25°C)
35
30
25
20
15
10
35
30
25
20
15
10
10
5
0
5
0
0.1
0.1
8
6
4
2
0
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
= 2 V
INSERTION POWER GAIN vs.
INSERTION POWER GAIN vs.
vs. COLLECTOR CURRENT
Collector Current, I
Frequency, f (GHz)
Frequency, f (GHz)
FREQUENCY
FREQUENCY
1
10
1
C
(mA)
V
I
V
I
C
C
CE
CE
= 15 mA
= 5 mA
= 2 V
= 2 V
100
10
10