BLS2731-50,114 NXP Semiconductors, BLS2731-50,114 Datasheet - Page 5

• Manufacturer Part Number: BLS2731-50,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-50,114

• Package / Case: SOT-422A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 9dB
• Power - Max: 80W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045770114; BLS2731-50 TRAY; BLS2731-50 TRAY

Philips Semiconductors
1998 Jan 30
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = ATC 200A 10 nF
C2 = ATC 100A 10 pF
C3 = ATC 700A 150 pF
C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF.
input
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
30
5
C4
C1
C2
30
r
= 2.2), thickness 0.38 mm.
MGM537
C3
output
BLS2731-50
Product specification
40