BLS3135-10,114 NXP Semiconductors, BLS3135-10,114 Datasheet - Page 6

• Manufacturer Part Number: BLS3135-10,114
• Description: TRANSISTOR RF POWER SOT445C
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-10,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.5GHz
• Gain: 9dB
• Power - Max: 34W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 250mA, 5V
• Current - Collector (ic) (max): 1.5A
• Mounting Type: Surface Mount
• Package / Case: SOT-445C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Other names: 934055936114; BLS3135-10 TRAY; BLS3135-10 TRAY

Philips Semiconductors
2000 Feb 01
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = 10 pF (ATC 100A); C2 = 100 pF (ATC 100A).
Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.
30
6
C2
30
C1
r
= 2.2), thickness 0.38 mm.
MCD862
40
BLS3135-10
Product specification