BLS3135-50,114 NXP Semiconductors, BLS3135-50,114 Datasheet - Page 6

• Manufacturer Part Number: BLS3135-50,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-50,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.5GHz
• Gain: 8dB
• Power - Max: 80W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Package / Case: SOT-422A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Other names: 934055198114; BLS3135-50 TRAY; BLS3135-50 TRAY

Philips Semiconductors
2003 Apr 15
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = C2 = ATC 100A 5.1 pF
input
Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit.
30
6
C1
30
C2
r
MCD762
= 2.2), thickness 0.38 mm.
output
40
BLS3135-50
Product specification