MRF899 Freescale Semiconductor, MRF899 Datasheet
MRF899
Specifications of MRF899
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MRF899 Summary of contents
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... Motorola, Inc. 1997 = 25°C unless otherwise noted.) C Symbol = (BR)CEO = (BR)CES = (BR)EBO = 0) I CES Order this document by MRF899/D MRF899 150 W, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE 375A–01, STYLE 1 Symbol Value Unit V 28 Vdc CEO V 60 Vdc CES V 4.0 Vdc EBO I 25 ...
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... C16 — 3.9 pF, B Case, ATC Chip Capacitor C19 — 0.8 pF, B Case, ATC Chip Capacitor C26 — 200 µF, Electrolytic Capacitor Mallory Sprague C27 — 500 µF Electrolytic Capacitor Figure 1. 900 MHz Power Gain Test Circuit MRF899 25°C unless otherwise noted.) C ...
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... Figure 2. Output Power versus Input Power Figure 4. Output Power versus Supply Voltage Figure 6. Power Gain versus Output Power MOTOROLA RF DEVICE DATA Figure 3. Output Power versus Frequency Figure 5. Intermodulation versus Output Power η Figure 7. Broadband Test Fixture Performance MRF899 3 ...
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... Circuit Tuned for Maximum Gain @ P MRF899 4 Ω Figure 8. Input and Output Impedances = 150 W (PEP NOTE: Z & are given from in OL NOTE: base–to–base and NOTE: collector–to–collector NOTE: respectively = MOTOROLA RF DEVICE DATA ...
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... Figure 9. MRF899 Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF899 5 ...
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... Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INCHES MILLIMETERS DIM MIN MAX MIN MAX Mfax is a trademark of Motorola, Inc. MOTOROLA RF DEVICE DATA MRF899/D ...